Risk Factors

•Today’s presentations contain forward-looking statements. All statements made that are not historical facts are subject to a number of risks and uncertainties, and actual results may differ materially. Please refer to our most recent Earnings Release and our most recent Form 10-Q or 10-K filing for more information on the risk factors that could cause actual results to differ. •If we use any non-GAAP financial measures during the presentations, you will find on our website, intc.com, the required reconciliation to the most directly comparable GAAP financial measure. Rev. 4/19/11 Today’s News The world’s first 3-D Tri-Gate transistors on a production technology New 22nm transistors have an unprecedented combination of power savings and performance gains. These benefits will enable new innovations across a broad range of devices from the smallest handheld devices to powerful cloud-based servers. The transition to 3-D transistors continues the pace of technology advancement, fueling Moore’s Law for years to come. The world’s first demonstration of a 22nm microprocessor -- code-named Ivy Bridge -- that will be the first high-volume chip to use 3-D Tri-Gate transistors. Energy-Efficient Performance Built on Moore’s Law 1 65nm 45nm 32nm 22nm 1x normalized) Leakage Power ( ransistor Transistor 0.1x Active er T er > er50% p 0.01x Power Low reduction Low Active 0.001x Constant Performance 0.1 65nm 45nm 32nm 22nm Higher Transistor Performance (Switching Speed) Planar Planar Planar Tri-Gate Source: Intel 22 nm Tri-Gate transistors increase the benefit from a new technology generation Source: Intel Transistor Innovations Enable Technology Cadence 2003 90 nm 2005 65 nm 2007 45 nm 2009 32 nm 2011 22 nm Invented SiGe Strained Silicon Strained Silicon nd 2 Gen. SiGe Strained Silicon Invented Gate-Last High-k Metal Gate nd 2 Gen. Gate-Last High-k Metal Gate First to Implement Tri-Gate High k Metal gate Tri-Gate Transistor Innovations Enable Cost Benefits of Moore’s Law to Continue 1 0.1 $ / Transistor (relative to 0.35um) 0.01 200mm 300mm Source: Intel 0.001 .35um .25um .18um .13um 90nm 65nm 45nm 32nm 22nm 14nm 10nm 22 nm Manufacturing Fabs D1D -- Oregon D1C -- Oregon Fab 32 -- Arizona Fab 28 -- Israel Fab 12 -- Arizona 22nm upgrades to be completed 2011-12 Tri-Gate Invented Tri-Gate Achievement Results from Long Term Commitment to Research Pathfinding Internal Research Development Tri-Gate Selected for 22nm node CE! transfer Manufacturing Tri-Gate Mfg Single-fin transistor demonstrated Multi-fin transistor demonstrated Tri-gate SRAM cells demonstrated Tri-gate RMG process flow developed Tri-gate optimized for HVM Bringing innovative technologies to HVM is the result of a highly coordinated internal research-development-manufacturing pipeline “For years we have seen limits to how small transistors can get,” said Gordon E. Moore. “This change in the basic structure is a truly revolutionary approach, and one that should allow Moore’s Law, and the historic pace of innovation, to continue.” 22 nm 3-D Tri-Gate Transistor Source: Intel 3-D Tri-Gate transistors form conducting channels on three sides of a vertical fin structure, providing “fully depleted” operation Transistors have now entered the third dimension! 22 nm 3-D Tri-Gate Transistor Source: Intel Gates Fins 32 nm Planar Transistors 22 nm Tri-Gate Transistors Source: Intel Std vs. Fully Depleted Transistors Bulk Transistor Gate Oxide Source Gate Inversion Layer Drain Depletion Region Silicon Substrate Substrate voltage exerts some electrical influence on the inversion layer (where source-drain current flows) The influence of substrate voltage degrades electrical sub-threshold slope (transistor turn-off characteristics) NOT fully depleted Source: Intel Std vs.